徳田安紀 (教授)

□部屋:情報工学部棟2309室

□電話:0866-94-2126(直通)

□FAX:0866-94-2199(学部共通)

□メールアドレス:tokuda@(以下c.oka-pu.ac.jpを付けて下さい)

□担当科目:

 ・学部:光エレクトロニクス,電子回路,計測工学
 ・大学院:半導体デバイス特論,量子効果デバイス

■履歴:

  1979年 3月 大阪大学 工学部 応用物理学科卒業

  1979年 4月 大阪大学大学院 工学研究科 応用物理学専攻博士前期課程入学

  1981年 3月 大阪大学大学院 工学研究科 応用物理学専攻博士前期課程修了

  1981年 4月 三菱電機株式会社 入社 中央研究所に配属

  1995年 10月 三菱電機株式会社 半導体基礎研究所 微細デバイス技術グループマネージャ

  2000年 10月 三菱電機株式会社 本社 開発本部

  2005年 4月 三菱電機株式会社 先端技術総合研究所 アドバンストデバイス技術部長

  2009年 12月 三菱電機株式会社 退職

  2010年 1月 岡山県立大学 情報工学部 情報通信工学科 教授 現在に至る

■学位:

  工学博士(大阪大学,1989年)

   超格子ならびに量子井戸構造の利用による半導体レーザーの高性能化と新機能化に関する研究

■学協会活動:

  (社)応用物理学会員(1981.9〜)
  (社)日本電子工業振興協会 量子効果デバイス専門委員会委員(1989.4〜1991.3)
  (社)日本電子工業振興協会 量子化デバイス機能専門委員会委員(1991.4〜1993.3)
  (社)電気学会 量子化機能電子材料調査専門委員会委員(1990.4〜1993.3)
  (財)新機能素子研究開発協会 量子化機能素子技術動向調査研究委員会委員(1991.4〜2001.3)
  (社)応用物理学会 関西支部幹事(2000.2〜2002.1)
  (社)応用物理学会 代議員(2002.2〜2006.1)
  (社)日本機械工業連合会 戦略的技術マネジメント調査分科会幹事(2001.4〜2003.3)
  (社)電子情報技術産業協会 フォトニックネットワークデバイス調査研究委員会委員(2003.4〜2004.3)
  (社)電子情報技術産業協会 電子材料・デバイス技術専門委員会委員(2005.4〜2008.3)
  (財)新機能素子研究開発協会 高周波デバイスプロジェクト技術委員(2005.4〜2007.3)
  (財)国立高等研究所 研究プロジェクト「メタマテリアルの開発と応用」研究者(2009.4〜2010.12)
  (独)日本学術振興会 メタマテリアルの開発と応用に関する先導的研究開発委員会委員(2009.4〜2010.12)

■学術雑誌論文:

Y. Tokuda, K. Sakaguchi, Y. Yamaguchi, and K. Takano, “Multiple intersection properties of optical resonance modes in metallic metamaterials,” AIP Advances 7(3), 035209 (2017).

Y. Tokuda, K. Takano, Y. Yamaguchi, K. Sakaguchi, and M. Nakajima, “Quasi-dielectric characteristics of stacked metallic metamaterials,” Jpn. J. Appl. Phys. 56(3), 030306 (2017).

Y. Tokuda, K. Sakaguchi, K. Takano, Y. Yamaguchi, and T. Fukushima, “Crossing behaviors of optical resonance modes in metallic metamaterials,” Appl. Phys. Express 9(3), 032201 (2016).

T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Light propagation in a Penrose unilluminable room,” Opt. Express 23(13),17431?17436 (2015).

K. Takano, F. Miyamaru, K. Akiyama, H. Miyazaki, M. W. Takeda, Y. Abe, Y. Tokuda, H. Ito, and M. Hangyo, “Crossover from capacitive to inductive electromagnetic responses in near self-complementary metallic checkerboard patterns with randomness,” Opt. Express 22(20), 24787-24795 (2014).

Y. Tokuda, K. Sakaguchi, K. Takano, T. Fukushima, and M. Hangyo, “Investigation of fade-out mechanism of resonance modes in optical transmission using stacked metallic sub-wavelength slit arrays,” J. Appl. Phys. 115 (24), 243104 (2014).

T. Fukushima, S. Shinohara, S. Sunada, T. Harayama, K. Sakaguchi, and Y. Tokuda, “Lasing of TM modes in a two-dimensional GaAs microlaser,” Opt. Express 22(10), 11912-11917 (2014).

T. Fukushima, S. Shinohara, S. Sunada, T. Harayama, K. Arai, K. Sakaguchi, and Y. Tokuda, “Selective excitation of lowest-order transverse ring modes in a quasi-stadium laser diode,” Opt. Lett. 38(20), 4158-4161 (2013).

T. Fukushima, K. Sakaguchi, M. Hangyo, and Y. Tokuda, “Analysis of resonator modes in two-dimensional laser cavities containing a left-handed material,” Opt. Rev. 20(4), 293-295 (2013).

K. Akiyama, K. Shibuya, K. Takano, Y. Abe, Y. Tokuda, and M. Hangyo, “Tuning the effective refractive index of a thin air gap region sandwiched by metallic metamaterials by lateral displacements,” J. Appl. Phys. 113(24), 243103 (2013).

Y. Tokuda, K. Sakaguchi, T. Nishihara, K. Takano, T. Fukushima, and M. Hangyo, “Spectrometric functions of multi-stacked metallic plates with modulated slit arrays,” Appl. Phys. Express 6(6), 062602 (2013).

T. Nanjo, A. Imai, Y.e Suzuki, Y. Abe, T. Oishi, M. Suita1, E. Yagyu, A. Shima, and Y. Tokuda, “AlGaN channel HEMT with extremely high breakdown voltage,” IEEE Trans. Electron Devices. ED-60(3), 1046-1053 (2013).

Y. Tokuda, K. Sakaguchi, K. Takano, T. Fukushima, and M. Hangyo, “Remarkable transmission characteristics of optical waves through modulated double-layered metallic slit arrays,” AIP Advances 2(4), 042112 (2012).

T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Quality factor of circular laser diode beam tailored by optical interference,” Opt. Rev. 19(5), 328-331 (2012).

Y. Tokuda, H. Takaiwa, K. Sakaguchi, Y. Yakiyama, K. Takano, K. Akiyama, T. Fukushima, and M. Hangyo, “Optical phased array functions in double-layered metallic plate systems with artificially modulated slit arrays,” Appl. Phys. Express 5, 042502 (2012).

T. Fukushima, S. Sunada, T. Harayama, K. Sakaguchi, and Y. Tokuda,“Lowest order axial and ring mode lasing in confocal quasi-stadium laser diodes,” Appl. Opt. 51(14), 2515-2520 (2012).

T. Nanjo, T. Motoya, A. Imai, Y. Suzuki, K. Shiozawa, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts,” Jpn. J. Appl. Phys. 50, 064101 (2011).

T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Laser diode beam shaping by optical Interference,” Opt. Rev. 18(3), 287-292 (2011).

K. Sugihara, E. Yagyu, T. Nishioka, K. Yoshiara, M. Matsui, Y.Tokuda, and K. Itoh, "Analysis of single-photon-detection characteristics of GaInAs/InP avalanche photodiodes," IEEE J. Quantum Electron. QE-46(10), 1444-1449 (2010).

K. Akiyama, K. Takano, Y. Abe, Y. Tokuda, and M. Hangyo, "Optical transmission anomalies in a double-layered metallic slit array," Optics Express 18(17), 17876-17882 (2010).

K. Takano, T. Kawabata, C-F. Hsieh, K. Akiyama, F. Miyamaru, Y. Abe, Y. Tokuda, R-P. Pan, C-L. Pan, and M. Hangyo, “Fabrication of terahertz planar metamaterials using a super-fine ink-jet printer,” Appl. Phys. Express 3(1), 016701 (2010).

T. Nanjo, M. Takeuchi, A. Imai, M. Suita, T. Oishi, Y. Abe, E. Yagyu, T. Kurata, Y. Tokuda, and Y. Aoyagi, “AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current,” Electron. Lett. 45(25), 1346-1348(2009).

T. Nanjo, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Comparison of the characteristics of the AlGaN channel HEMTs formed on SiC and sapphire substrates,” Electron. Lett. 45(8), 424-426 (2009).

E. Yagyu, E. Ishimura, N. Tomita, M. Nakaji, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Design and characteristics of guardring-free planar AlInAs avalanche photodiodes,” J. Lightwave Technol. 27(8), 1011-1017 (2009).

T. Nanjo, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Drivability enhancement for AlGaN/GaN high-electron mobility transistors with AlN spacer layer using Si ion implantation doping,” Appl. Phys. Express 2(3), 031003 (2009).

Y. Tokuda and E. Yagyu, “Silicon Photonics: Look out III-V,” Nature Photonics 3(1), 7-8 (2009).

M. Suita, T. Nanjo, T. Oishi, Y. Abe, and Y. Tokuda, “Application of a lightly doped drain structure to AlGaN/GaN HEMTs by an ion implantation technique,” Electron. Lett. 44(23), 1378-1379 (2008).

T. Nanjo, M. Takeuchi, M. Suita, T. Oishi, Y. Abe, Y. Tokuda, and Y. Aoyagi, “Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors,” Appl. Phys. Lett. 92, 263502 (2008).

S. Nishikawa, M.Gotoda, T. Nishimura, T. Miyahara, T. Hatta, Y. Miyazaki, K. Matsumoto, K. Takagi, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Lasing mechanism analysis of self-pulsating distributed feedback laser diodes and successful demonstration of all-optical signal recovery at 40 Gbps,” Jpn. J. Appl. Phys. 47(5), 3493-3498 (2008).

E. Yagyu, E. Ishimura, N. Tomita, M. Nakaji, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Lateral n-p-n avalanche photodiodes with an AlInAs multiplication layer,” Electron. Lett. 44(9), 591-592 (2008).

E. Yagyu , K. Sugihara, T. Nishioka, M. Matsui, K. Yoshiara, and Y. Tokuda, “Planar avalanche photodiode for long-haul single-photon optic fiber communications,” Appl. Phys. Express 1(1), 012001(2008).

T. Nanjo, M. Takeuchi, M. Suita, Y. Abe, T. Oishi, Y. Tokuda, and Y. Aoyagi, “First operation of AlGaN channel high electron mobility transistors,” Appl. Phys. Express 1(1), 011101(2008).

E. Ishimura, E. Yagyu, M. Nakaji, S. Ihara, K. Yoshiara, T. Aoyagi, Y. Tokuda, and T. Ishikawa, “Degradation mode analysis on highly reliable guardring-free InAlAs avalanche photodiode,” J. Lightwave Technol. LT-25(12), 3686-3693 (2007).

T. Nanjo, K. Kawase, M. Suita, Y. Abe, T. Oishi, and Y. Tokuda, “X-ray photoelectron spectroscopy study of the origin of the improved device performance by a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high-electron-mobility transistor,” Jpn. J. Appl. Phys. 46(24), L584-L586 (2007).

T. Takenaga, T. Kuroiwa, J. Tsuchimoto, R. Matsuda, S. Ueno, H. Takada, Y. Abe, and Y. Tokuda, “Suppression of switching-field variation by surface oxidation depending on the shape of the CoFeB free layer,” IEEE Trans. Magn. MAG-43(6), 2352?2354 (2007).

E. Yagyu, E. Ishimura, M. Nakaji, Y. Mikami, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Guardring-free AlInAs avalanche photodiodes for 2.5-Gb/s receivers with high sensitivity ,” IEEE Photonics Technol. Lett. PTL-19(10), 765-768 (2007).

K. Sugihara, E. Yagyu, and Y. Tokuda, “Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode,” J. Appl. Phys. 99, 124502 (2006).

E. Yagyu, E. Ishimura, M. Nakaji, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Investigation of guardring-free planar AlInAs avalanche photodiodes,” IEEE Photonics Technol. Lett. PTL-18(11),1264-1266 (2006).

M. Suita, T. Nanjo, T. Oishi, Y. Abe, and Y. Tokuda, “Ion implantation doping for AlGaN/GaN HEMTs,” physica status solidi (c) 3(6), 2364-2367(2006).

T. Takenaga, T. Kuroiwa, T. Furukawa, M. Taki, K. Yoshiara, and Y. Tokuda, “Thermal robustness in synthetic antiferromagnetic free layer for magnetic random access memory applications,” J. Appl. Phys. 99, 08C911 (2006)

S. Nishikawa, M. Gotoda, T. Nishimura, T. Miyahara, T. Hatta, K. Matsumoto, K. Takagi, T. Aoyagi, and Y. Tokuda, “All-optical clock recovery and wavelength conversion by combination of self-pulsation laser and semiconductor-optical-amplifier-based Mach-Zehnder interferometer,” Jpn. J. Appl. Phys. 45(4B), 3457-3461(2006).

T. Nanjo, T. Oishi, M. Suita, Y. Abe, and Y. Tokuda, “Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics,” Appl. Phys. Lett. 88, 043503 (2006).

E. Yagyu, E. Ishimura, M. Nakaji, T. Aoyagi, and Y. Tokuda, “Simple planar structure for high-performance AlInAs avalanche photodiodes,” IEEE Photonics Technol. Lett. PTL-18(1), 76-78 (2006).

S. Nishikawa, M. Gotoda, T. Nishimura, and Y. Tokuda, “Coupling coefficient dependence on oscillation frequency stability of self-pulsating DFB laser diodes,” Electron. Lett. 41(17), 964- 966 (2005).

S. Nishikawa, M. Gotoda, T. Nishimura, and Y. Tokuda, “Optical high-frequency pulse generation with wavelength tunability by using a DBR laser with vernier-type gratings,” IEEE Photonics Technol. Lett. PTL-17(8), 1608- 1610 (2005).

M. Gotoda, T. Nishimura, and Y. Tokuda, “A widely tunable SOA-integrated DBR laser by combination of sampled and superstructure gratings,” IEEE J. Lightwave Technol. LT-23(7), 2331- 2336 (2005).

S. Nishikawa, M. Gotoda, T. Nishimura, and Y. Tokuda, “Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes,” Appl. Phys. Lett. 85(21), 4840-4841 (2004).

S. Nishikawa, M. Gotoda, T. Nishimura, Y. Tokuda, and K. Matsumoto, “Very high frequency self-pulsation and stable optical injection locking for well-defined multi-electrode distributed feedback lasers,” Jpn. J. Appl. Phys. 43(4B), 1965-1968 (2004).

T. Furukawa, T. Nakahata, S. Maruno, J. Tanimura, Y. Tokuda, and S. Satoh, “Surface defect formation in epitaxial Si grown on boron-doped substrates by ultrahigh vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 40(10A), L1051-L1053 (2001).

N. Miura, Y. Abe, K. Sugihara, T. Oishi, T. Furukawa, T. Nakahata, K. Shiozawa, S. Maruno, and Y. Tokuda, “Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs,” IEEE Trans. Electron Devices. ED-48(9), 1969-1974 (2001).

T. Nakahata, K. Sugihara, T. Furukawa, Y. Nishioka, S. Maruno, Y. Abe, Y. Tokuda, and S. Satoh, “Improvement of alignment tolerance against contact hole etching by growing of underlying silicon-selective epitaxial layer,” Microelectronic Engineering 56, 281-287 (2001).

T. Nakahata, K. Yamamoto, J. Tanimura, T. Inagaki, T. Furukawa, S. Maruno, Y. Tokuda, A. Miyamoto, S. Satoh, and H. Kiyama, “Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth,” J. Crystal Growth 226(4), 443-450 (2001).

K. Sugihara, Y. Abe, T. Oishi, N. Miura, and Y. Tokuda, “Short channel characteristics of quasi-single-drain MOSFETs,” IEEE Electron Device Lett. EDL-22(7), 351-353 (2001).

K. Sugihara, N. Miura, T. Furukawa, T. Nakahata, T. Oishi, S. Maruno, Y. Abe, and Y. Tokuda, “A dual-gate complementary metal-oxide-semiconductor technology with novel self-aligned pocket implantation which takes advantage of elevated source/drain configurations,” Jpn. J. App. Phys. 40(4B), 2611-2615 (2001).

K. Shiozawa, T. Oishi, Y. Abe, and Y. Tokuda, “Remarkable effects of introduction of SiON materials into shallow trench isolation fabrication process on metal-oxide-semiconductor field-effect-transistors,” Jpn. J. App. Phys. 40(2A), 462-466 (2001).

T. Nakahata, K. Sugihara, T. Furukawa, S. Yamakawa, S. Maruno, Y. Tokuda, K. Yamamoto, T. Inagaki, and H. Kiyama, “Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition,” Materials Science and Engineering B68, 171-174 (2000).

S. Maruno, T. Nakahata, T. Furukawa, Y. Tokuda, S. Satoh, K. Yamamoto, T. Inagaki, and H. Kiyama, “Selective epitaxial growth by ultrahigh-vacuum chemical vapor deposition with alternating gas supply of Si2H6 and Cl2,” Jpn. J. Appl. Phys. 39(11), 6139-6142 (2000).

K. Shiozawa, T. Oishi, Y. Abe, and Y. Tokuda, “Expansion of effective channel width for MOSFETs defined by novel T-shaped shallow trench isolation fabricated with SiON spacers and liners,” Electron. Lett. 36(10), 910-912 (2000).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, “Isolation edge effect depending on gate length of MOSFET's with various isolation structures,” IEEE Trans. Electron Devices, ED-47(4), 822-827 (2000).

K. Sugihara, N. Miura, T. Furukawa, T. Nakahata, Y. Nishioka, S. Yamakawa, Y. Abe, S. Maruno, and Y. Tokuda, “Parasitic resistance reduction in deep submicron dual-gate transistors with partially elevated source/drain extension regions fabricated by complementary metal-oxide-semiconductor technologies,” Jpn. J. Appl. Phys. 39(2A), 387-389 (2000).

Y. Abe, T. Oishi, K. Shiozawa, Y. Tokuda, and S. Satoh, “Simulation study on comparison between metal gate and polysilicon gate for sub-quarter-micron MOSFET's,” IEEE Electron. Device Lett. EDL-20(12), 632-634 (1999).

T. Furukawa, T. Nakahata, S. Maruno, Y. Tokuda, and S. Satoh, “Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 38(9A), 5046-5047 (1999).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, Y. Tokuda, and S. Satoh, “Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistor (MOSFET),” Microelectronic Engineering 45, 369-375 (1999).

T. Nakahata, S. Maruno, S. Yamakawa, T. Furukawa, Y. Tokuda, and S. Satoh, “Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 38(7A), 4045-4046 (1999).

S. Yamakawa, K. Sugihara, T. Furukawa, Y. Nishioka, T. Nakahata, Y. Abe, S. Maruno, and Y. Tokuda, “Drivability improvement on deep-submicron MOSFET's by elevation of source/drain regions,” IEEE Electron Device Lett. EDL-20(7), 366-368 (1999).

K. Shiozawa, T. Oishi, K. Sugihara, A. Furukawa, Y. Abe, and Y. Tokuda, “Advantage of shallow trench isolation over local oxidation of silicon on alignment tolerance,” Jpn. J. Appl. Phys. 38(3A), L234-L235 (1999).

T. Oishi, A. Furukawa, K. Shiozawa, Y. Abe, and Y. Tokuda, “Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film,” Electron. Lett. 34(25), 2436-2438 (1998).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, “Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors,” Jpn. J. Appl. Phys. 37(7B), L852-L854 (1998).

T. Oishi, K. Shiozawa, K. Sugihara, Y. Abe, and Y. Tokuda, “Protection of field oxide in trench isolation against contact hole etching to improve alignment tolerance,” Jpn. J. Appl. Phys. 37(7B), L833-L835 (1998).

K. Shiozawa, T. Oishi, N. Maeda, T. Murakami, K. Yasumura, Y. Abe, and Y. Tokuda, “Excellent electrical characteristics of ultrafine trench isolation,” J. Electrochem. Soc. 145(5), 1684-1687 (1998).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, “Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench,” Jpn. J. Appl. Phys. 36(5A), L547-L549 (1997).

K. Shiozawa, T. Oishi, N. Maeda, T. Murakami, K. Yasumura, Y. Abe, and Y. Tokuda, “Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process,” Jpn. J. Appl. Phys. 35(12B), L1625-L1627 (1996).

H. Abe, H. Harima, S. Nakashima, M. Tani, K. Sakai, Y. Tokuda, K. Kanamoto, and Y. Abe, “Characterization of crystallinity in low-temperature-grown GaAs layers by Raman scattering and time-resolved photoreflectance measurements,” Jpn. J. Appl. Phys. 35(12A), 5955-5963 (1996).

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33(9A), 4807-4811 (1994).

S. Nara, Y. Tokuda, Y. Abe, M. Yasukawa, N. Tsukada, and H. Totsuji, “Multistable behavior of connected bistable devices,” J. Appl. Phys. 75(8), 3749-3755 (1994).

O. Brandt, K. Kanamoto, Y. Tokuda, Y. Abe, Y. Wada, and N. Tsukada, “Effects of an electric field on exciton recombination in three-step asymmetric coupled quantum wells,” J. Appl. Phys. 75(4), 2105-2109 (1994).

Y. Tokuda, Y. Abe, and N. Tsukada, “External bias voltage and incident light intensity dependence effects of quantum-confined excitonic transitions on bulk background photocurrent spectra,” J. Appl. Phys. 75(3), 1620-1622 (1994).

Y. Abe and Y. Tokuda, “Significant effect of lateral resistivity on optical nonlinear responses of a quantum well p-i-n photodiode,” Appl. Phys. Lett. 63(24), 3259-3261 (1993).

O. Brandt, K. Kanamoto, Y. Tokuda, and N. Tsukada, “Optical properties of a highly-quality (311)-oriened GaAs/Al0.33Ga0.67As single quantum well,” Phys. Rev. B48(23), 17599-17602 (1993).

Y. Tokuda, Y. Abe, N. Tsukada, and S. Nara, “Optically reversible switching between binary states using multistable loops,” Appl. Phys. Lett. 63(19), 2609-2611 (1993).

Y. Abe and Y. Tokuda, “All-optical bistability of a p-i-p-i-n device with GaAs/AlAs coupled-quantum-well absorption layers and AlAs resistive layer,” Opt. Lett. 18(11), 885-887 (1993).

Y. Tokuda and Y. Abe, “Optical bistable responses based on self-electro-optic effect in a nonbiased asymmetric coupled quantum well p-i-n photodiode,” Appl. Phys. Lett. 62(20), 2492-2494 (1993).

Y. Abe, Y. Tokuda, K. Kanamoto, and N. Tsukada, “Optical nonlinear responses of a quantum well photodiode with a non-ohmic contact,” Appl. Phys. Lett. 60(14), 1664-1666 (1992).

K. Kanamoto, Y. Tokuda, and N. Tsukada, “Step promoted surface reconstruction on Ga-deposited (100) GaAs during molecular beam epitaxy with alternating supply of Ga and As,” Jpn. J. Appl. Phys. 30(12A), 3491-3495 (1991).

Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Triple excitonic mixing associated with recoupling of a Stark-localized state in coupled quantum wells confined by superlattices,” Phys. Rev. B43(9), 7170-7173 (1991).

Y. Tokuda, Y. Abe, K. Kanamoto, and N. Tsukada, “Complex multistable response of serially connected optical bistable devices,” Appl. Phys. Lett. 59(9), 1016-1018 (1991).

Y. Abe, Y. Tokuda, K. Kanamoto, and N. Tsukada, “Room-temperature self-electrooptic effects of GaAs/AlAs asymmetric coupled quantum wells,” Jpn. J. Appl. Phys. 30(6A), L963-L965 (1991).

Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Observation of excitonic effects on electroabsorption in coupled quantum wells,” Phys. Rev. B41(14), 10280-10282 (1990).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Novel spectral response of a coupled quantum well photodiode,” Appl. Phys. Lett. 56(22), 2166-2168 (1990).

Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Dual-wavelength multiple quantum well n-i-p-i-n photodetector using an optically bistable abrupt absorption edge,” Appl. Phys. Lett. 56(3), 227-229 (1990).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Self-electro-optic effect based on anticrossing of excitonic transitions in a coupled quantum well structure,” Appl. Phys. Lett. 56(2), 166-167 (1990).

N. Tsukada, K. Fujiwara, Y. Tokuda, K. Kanamoto, and T. Nakayama, “Large population recovery in a strongly driven two-level atomic system by an additional laser field,” Phys. Rev. A39(11), 5797-5800 (1989).

K. Kanamoto, K. Fujiwara, Y. Tokuda, N. Tsukada, M. Ishii, and T. Nakayama, “Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy,” Appl. Surf. Sci. 41/42, 526-529 (1989).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Incident wavelength dependence of photocurrent bistability by external bias voltage control in a quantum well p-i-n diode,” Appl. Phys. Lett. 55(8), 711-712 (1989).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Self-deformed and hysteretic photocurrent spectra of quantum wells with a load resister,” Appl. Phys. Lett. 54(23), 2324-2326 (1989).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Photoluminescence of a novel hetero n-i-p-i structure incorporating triple quantum wells,” Jpn. J. Appl. Phys. 28(5), L747-L749 (1989).

Y. Tokuda, K. Kanamoto, N. Tsukada, and T. Nakayama, “Distinct observation of interwell coupling effect on optical transitions in double quantum wells in an electric field,” Appl. Phys. Lett. 54(13), 1232-1234 (1989).

Y. Tokuda, K. Kanamoto, N. Tsukada, and T. Nakayama, “Anomalous excitation-intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure,” J. Appl. Phys. 65(5), 2168-2170 (1989).

K. Kanamoto, K. Fujiwara, Y. Tokuda, N. Tsukada, M. Ishii, and T. Nakayama, “Surface diffusion during MBE growth of GaAs-AlGaAs single quantum wells on vicinal surfaces,” J. Crystal Growth 95(1), 273-276 (1989).

Y. Tokuda, Y. Abe, T. Matsui, K. Kanamoto, N. Tsukada, and T. Nakayama, “Emission spectra of single quantum well lasers with inhomogeneous current injection,” J. Appl. Phys. 64(3), 1022-1026 (1988).

Y. Tokuda, Y. Abe, T. Matsui, N. Tsukada, and T. Nakayama, “Dual-wavelength emission from a twin-stripe single quantum well laser,” Appl. Phys. Lett. 51(21), 1664-1666 (1987). 

Y. Tokuda, T. Matsui, K. Fujiwara, N. Tsukada, and T. Nakayama, “Lasing wavelength of an asymmetric double quantum well laser diode,” Appl. Phys. Lett. 51(4), 209-211 (1987).

K. Fujiwara, K. Kanamoto, Y. N. Ohta, Y. Tokuda, and T. Nakayama, “Classification and origins of GaAs oval defects grown by molecular beam epitaxy,” J. Crystal Growth 80(1), 104-112 (1987).

A. Nakamura, K. Fujiwara, Y. Tokuda, T. Nakayama, and M. Hirai, “Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice,” Phys. Rev. B34(12), 9019-9022 (1986).

Y. Tokuda, N. Tsukada, K. Fujiwara, K. Hamanaka, and T. Nakayama, “Widely separated wavelength switching of single quantum well laser diode by injection-current control,” Appl. Phys. Lett. 49(24), 1629-1631 (1986).

K. Fujiwara, A. Nakamura, Y. Tokuda, T. Nakayama, and M. Hirai, “Improved recombination lifetime of photoexcited carrier in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices,” Appl. Phys. Lett. 49(18), 1193-1195 (1986).

Y. Tokuda, K. Fujiwara, N. Tsukada, K. Kojima, K. Hamanaka, and T. Nakayama, “Carrier-temperature and wavelength-switching in GaAs single-quantum-well laser diode,” Jpn. J. Appl. Phys. 25(11), L931-L933 (1986).

Y. Tokuda, Y. N. Ohta, K. Fujiwara, and T. Nakayama, “Application of AlAs-GaAs superlattice to step-index and graded-index waveguide separate-confinement heterostructure laser diodes,” J. Appl. Phys. 60(8), 2729-2734 (1986).

Y. Tokuda, K. Fujiwara, and T. Nakayama, “Separate confinement heterostructure laser diodes with all-binary AlAs/GaAs short-period-superlattice optical confinement layers,” Inst. Phys. Conf. Ser. 79, 697-702 (1986).

Y. Nishikawa, K. Kanamoto, Y. Tokuda, K. Fujiwara, and T. Nakayama, “On the origin of oval defect with nucleus on epilayers grown by molecular beam epitaxy,” Jpn. J. Appl. Phys. 25(6), 908-909 (1986).

K. Fujiwara, Y. Nishikawa, Y. Tokuda, and T. Nakayama, “Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy,” Appl. Phys. Lett. 48(11), 701-703 (1986).

M. Umesaki. Y. Tokuda, and K. Hamanaka, “Magnetic properties of super sendust films,” IEEE Trans. on Magn. MAG-18(6), 1182-1184(1982).

S. Nakashima, Y. Tokuda, A. Mitsuishi, R. Aoki, and Y. Hamaue, “Raman scattering from 2H-NbS2 and intercalated NbS2,” Solid State Commun. 42(8), 601-604 (1982).