研究成果:学術論文

T. Fukushima, K. Sakaguchi, M. Hangyo, and Y. Tokuda, “Analysis of resonator modes in two-dimensional laser cavities containing a left-handed material,” Opt. Rev. 20(4), 293-295 (2013).

S. Sunada, T. Fukushima, S. Shinohara, T. Harayama, and M. Adachi, “Stable single-wavelength emission from fully chaotic microcavity lasers,” Phys. Rev. A 88(1), 013802 (2013).

K. Akiyama, K. Shibuya, K. Takano, Y. Abe, Y. Tokuda, and M. Hangyo, “Tuning the effective refractive index of a thin air gap region sandwiched by metallic metamaterials by lateral displacements,” J. Appl. Phys. 113(24), 243103 (2013).

Y. Tokuda, K. Sakaguchi, T. Nishihara, K. Takano, T. Fukushima, and M. Hangyo, “Spectrometric functions of multi-stacked metallic plates with modulated slit arrays,” Appl. Phys. Express 6(6), 062602 (2013).

T. Nanjo, A. Imai, Y.e Suzuki, Y. Abe, T. Oishi, M. Suita1, E. Yagyu, A. Shima, and Y. Tokuda, “AlGaN channel HEMT with extremely high breakdown voltage,” IEEE Trans. Electron Devices. ED-60(3), 1046-1053 (2013).

Y. Tokuda, K. Sakaguchi, K. Takano, T. Fukushima, and M. Hangyo, “Remarkable transmission characteristics of optical waves through modulated double-layered metallic slit arrays,” AIP Advances 2(4), 042112 (2012).

T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Quality factor of circular laser diode beam tailored by optical interference,” Opt. Rev. 19(5), 328-331 (2012).

Y. Tokuda, H. Takaiwa, K. Sakaguchi, Y. Yakiyama, K. Takano, K. Akiyama, T. Fukushima, and M. Hangyo, “Optical phased array functions in double-layered metallic plate systems with artificially modulated slit arrays,” Appl. Phys. Express 5, 042502 (2012).

T. Fukushima, S. Sunada, T. Harayama, K. Sakaguchi, and Y. Tokuda,“Lowest order axial and ring mode lasing in confocal quasi-stadium laser diodes,” Appl. Opt. 51(14), 2515-2520 (2012).

T. Nanjo, T. Motoya, A. Imai, Y. Suzuki, K. Shiozawa, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Enhancement of drain current by an AlN spacer layer insertion in AlGaN/GaN high-electron-mobility transistors with Si-ion-implanted source/drain contacts,” Jpn. J. Appl. Phys. 50, 064101 (2011).

S. Shinohara, T. Harayama, T. Fukushima, M. Hentschel, S. Sunada, and E. E. Narimanov, “Chaos-assisted emission from asymmetric resonant cavity microlasers,” Phy. Rev. A 83(5), 053837 (2011).

T. Fukushima, K. Sakaguchi, and Y. Tokuda, “Laser diode beam shaping by optical Interference,” Opt. Rev. 18(3), 287-292 (2011).

S. Shinohara, T. Harayama, and T. Fukushima, “Fresnel filtering of Gaussian beams in microvavities,” Opt. Lett. 36(6), 1023-1025 (2011).

S. Shinohara, T. Harayama, T. Fukushima, M. Hentschel, T. Sasaki, and E. E. Narimanov, “Chaos-assisted directional light emission from microcavity lasers,” Phys. Rev. Lett. 104 , 163902 (2010).

K. Sugihara, E. Yagyu, T. Nishioka, K. Yoshiara, M. Matsui, Y.Tokuda, and K. Itoh, "Analysis of single-photon-detection characteristics of GaInAs/InP avalanche photodiodes," IEEE J. Quantum Electron. QE-46(10), 1444-1449 (2010).

K. Akiyama, K. Takano, Y. Abe, Y. Tokuda, and M. Hangyo, "Optical transmission anomalies in a double-layered metallic slit array," Optics Express 18(17), 17876-17882 (2010).

K. Takano, T. Kawabata, C-F. Hsieh, K. Akiyama, F. Miyamaru, Y. Abe, Y. Tokuda, R-P. Pan, C-L. Pan, and M. Hangyo, “Fabrication of terahertz planar metamaterials using a super-fine ink-jet printer,” Appl. Phys. Express 3(1), 016701 (2010).

T. Nanjo, M. Takeuchi, A. Imai, M. Suita, T. Oishi, Y. Abe, E. Yagyu, T. Kurata, Y. Tokuda, and Y. Aoyagi, “AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current,” Electron. Lett. 45(25), 1346-1348(2009).

T. Nanjo, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Comparison of the characteristics of the AlGaN channel HEMTs formed on SiC and sapphire substrates,” Electron. Lett. 45(8), 424-426 (2009).

E. Yagyu, E. Ishimura, N. Tomita, M. Nakaji, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Design and characteristics of guardring-free planar AlInAs avalanche photodiodes,” J. Lightwave Technol. 27(8), 1011-1017 (2009).

T. Nanjo, M. Suita, T. Oishi, Y. Abe, E. Yagyu, K. Yoshiara, and Y. Tokuda, “Drivability enhancement for AlGaN/GaN high-electron mobility transistors with AlN spacer layer using Si ion implantation doping,” Appl. Phys. Express 2(3), 031003 (2009).

Y. Tokuda and E. Yagyu, “Silicon Photonics: Look out III-V,” Nature Photonics 3(1), 7-8 (2009).

T. Fukushima, Y. Handa, and K. Miyahara, “Design of optical coupling systems between two-dimensional quasi-stadium laser diodes and single-mode optical fibers,” Opt. Rev. 16(5), 540-547 (2009).

K. Sakaguchi, S. Furukawa, S. Matsuo, N. Sakashita, T. Katsura, K. Yamazaki, H. Kawaguchi, A. Maki and E. Okada, “Influence of a skull cranial window on the measurement of haemoglobin concentration in cortical tissue by multi-spectral imaging analysis,” Opt. Rev. 16(2), 74-80, (2009).

H. Kawaguchi, N. Okui, K. Sakaguchi and E. Okada “Theoritical analysis of crosstalk between oxygenated and deoxygenated haemoglobin in focal brain-activation measurements by near-infrared topography,” Opto-Electronics Review 16(4), 404-412 (2008).

T. Fukushima, K. Miyahara, and N. Nakata, “Beam profile tailoring of laser diodes using Lloyd’s mirror interference,” IEICE Trans. Electron. E92-C(8), 1095-1097 (2009).

M. Choi, T. Fukushima, and T. Harayama, “Alternate oscillations in quasistadium laser diodes,” Phys. Rev. A 77(6), 063814 (2008).

M. Suita, T. Nanjo, T. Oishi, Y. Abe, and Y. Tokuda, “Application of a lightly doped drain structure to AlGaN/GaN HEMTs by an ion implantation technique,” Electron. Lett. 44(23), 1378-1379 (2008).

T. Nanjo, M. Takeuchi, M. Suita, T. Oishi, Y. Abe, Y. Tokuda, and Y. Aoyagi, “Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors,” Appl. Phys. Lett. 92, 263502 (2008).

S. Nishikawa, M.Gotoda, T. Nishimura, T. Miyahara, T. Hatta, Y. Miyazaki, K. Matsumoto, K. Takagi, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Lasing mechanism analysis of self-pulsating distributed feedback laser diodes and successful demonstration of all-optical signal recovery at 40 Gbps,” Jpn. J. Appl. Phys. 47(5), 3493-3498 (2008).

E. Yagyu, E. Ishimura, N. Tomita, M. Nakaji, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Lateral n-p-n avalanche photodiodes with an AlInAs multiplication layer,” Electron. Lett. 44(9), 591-592 (2008).

E. Yagyu , K. Sugihara, T. Nishioka, M. Matsui, K. Yoshiara, and Y. Tokuda, “Planar avalanche photodiode for long-haul single-photon optic fiber communications,” Appl. Phys. Express 1(1), 012001(2008).

T. Nanjo, M. Takeuchi, M. Suita, Y. Abe, T. Oishi, Y. Tokuda, and Y. Aoyagi, “First operation of AlGaN channel high electron mobility transistors,” Appl. Phys. Express 1(1), 011101(2008).

S. Shinohara, T. Fukushima, and T. Harayama, “Light emission pattern from stadium-shaped semiconductor microcavity lasers,” Phys. Rev. A 77(3), 033807 (2008).

T. Fukushima, S. Shinohara, and T. Harayama, “Light beam output from diamond-shaped total-internal reflection modes by using intracavity air gaps,” Opt. Express. 15(25), 17392-17400 (2007).

T. Fukushima, T. Tanaka, and T. Harayama, “High-quality lowest-loss-mode lasing in GaAs quasi-stadium laser diodes having unstable resonators,” Opt. Lett. 32(23), 3397-3399 (2007).

T. Tanaka, M. Hentschel, T. Fukushima, and T. Harayama, “Classical phase space revealed by coherent light,” Phys. Rev. Lett. 98(3), 033902 (2007).

K. Sakaguchi, T. Tachibana, S. Furukawa, T. Katsura, K. Yamazaki, H. Kawaguchi, A. Maki and E. Okada, “Experimental prediction of wavelength-dependent pathlength factor for optical intrinsic signal analysis,” Appl. Opt. 46(14), 2769-2777 (2007).

E. Ishimura, E. Yagyu, M. Nakaji, S. Ihara, K. Yoshiara, T. Aoyagi, Y. Tokuda, and T. Ishikawa, “Degradation mode analysis on highly reliable guardring-free InAlAs avalanche photodiode,” J. Lightwave Technol. LT-25(12), 3686-3693 (2007).

T. Nanjo, K. Kawase, M. Suita, Y. Abe, T. Oishi, and Y. Tokuda, “X-ray photoelectron spectroscopy study of the origin of the improved device performance by a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high-electron-mobility transistor,” Jpn. J. Appl. Phys. 46(24), L584-L586 (2007).

T. Takenaga, T. Kuroiwa, J. Tsuchimoto, R. Matsuda, S. Ueno, H. Takada, Y. Abe, and Y. Tokuda, “Suppression of switching-field variation by surface oxidation depending on the shape of the CoFeB free layer,” IEEE Trans. Magn. MAG-43(6), 2352?2354 (2007).

E. Yagyu, E. Ishimura, M. Nakaji, Y. Mikami, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Guardring-free AlInAs avalanche photodiodes for 2.5-Gb/s receivers with high sensitivity ,” IEEE Photonics Technol. Lett. PTL-19(10), 765-768 (2007).

K. Sugihara, E. Yagyu, and Y. Tokuda, “Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode,” J. Appl. Phys. 99, 124502 (2006).

E. Yagyu, E. Ishimura, M. Nakaji, T. Aoyagi, K. Yoshiara, and Y. Tokuda, “Investigation of guardring-free planar AlInAs avalanche photodiodes,” IEEE Photonics Technol. Lett. PTL-18(11),1264-1266 (2006).

M. Suita, T. Nanjo, T. Oishi, Y. Abe, and Y. Tokuda, “Ion implantation doping for AlGaN/GaN HEMTs,” physica status solidi (c) 3(6), 2364-2367(2006).

T. Takenaga, T. Kuroiwa, T. Furukawa, M. Taki, K. Yoshiara, and Y. Tokuda, “Thermal robustness in synthetic antiferromagnetic free layer for magnetic random access memory applications,” J. Appl. Phys. 99, 08C911 (2006).

S. Nishikawa, M. Gotoda, T. Nishimura, T. Miyahara, T. Hatta, K. Matsumoto, K. Takagi, T. Aoyagi, and Y. Tokuda, “All-optical clock recovery and wavelength conversion by combination of self-pulsation laser and semiconductor-optical-amplifier-based Mach-Zehnder interferometer,” Jpn. J. Appl. Phys. 45(4B), 3457-3461(2006).

T. Nanjo, T. Oishi, M. Suita, Y. Abe, and Y. Tokuda, “Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN/GaN high electron mobility transistor characteristics,” Appl. Phys. Lett. 88, 043503 (2006).

E. Yagyu, E. Ishimura, M. Nakaji, T. Aoyagi, and Y. Tokuda, “Simple planar structure for high-performance AlInAs avalanche photodiodes,” IEEE Photonics Technol. Lett. PTL-18(1), 76-78 (2006).

M. Choi, T. Tanaka, T. Fukushima, and T. Harayama, “Control of directional emission in quasistadium microcavity laser diodes with two electrodes,” Appl. Phys. Lett. 88(21), 211110 (2006).

T. Fukushima, T. Harayama, and J. Wiersig, “Ray-wave correspondence in an unstable quasistadium laser resonator,” Phys. Rev. A 73(2), 023816 (2006).

T. Fukushima, T. Tanaka, and T. Harayama, “Ring and axis mode switching in multielectrode strained InGaAsP multiple-quantum-well quasistadium laser diodes,” Appl. Phys. Lett. 87(19), 191103 (2005).

T. Fukushima, T. Tanaka, and T. Harayama, “Unidirectional beam emission from strained InGaAsP multiple-quantum well quasistadium laser diodes,” Appl. Phys. Lett. 86(17), 171103 (2005).

S. Nishikawa, M. Gotoda, T. Nishimura, and Y. Tokuda, “Coupling coefficient dependence on oscillation frequency stability of self-pulsating DFB laser diodes,” Electron. Lett. 41(17), 964- 966 (2005).

S. Nishikawa, M. Gotoda, T. Nishimura, and Y. Tokuda, “Optical high-frequency pulse generation with wavelength tunability by using a DBR laser with vernier-type gratings,” IEEE Photonics Technol. Lett. PTL-17(8), 1608- 1610 (2005).

M. Gotoda, T. Nishimura, and Y. Tokuda, “A widely tunable SOA-integrated DBR laser by combination of sampled and superstructure gratings,” IEEE J. Lightwave Technol. LT-23(7), 2331- 2336 (2005).

S. Nishikawa, M. Gotoda, T. Nishimura, and Y. Tokuda, “Self-pulsation and optical injection locking for multielectrode distributed feedback lasers using phase-shift-induced modes,” Appl. Phys. Lett. 85(21), 4840-4841 (2004).

S. Nishikawa, M. Gotoda, T. Nishimura, Y. Tokuda, and K. Matsumoto, “Very high frequency self-pulsation and stable optical injection locking for well-defined multi-electrode distributed feedback lasers,” Jpn. J. Appl. Phys. 43(4B), 1965-1968 (2004).

T. Fukushima and T. Harayama, “Stadium and quasi-stadium laser diodes (invited paper),” IEEE J. Select. Topics Quantum Electron. 10(5), 1039-1051 (2004).

T. Fukushima, T. Harayama, T. Miyasaka and P. O. Vaccaro, “Morphological dependence of lasing modes in two-dimensional quasi-stadium laser diodes,” J. Opt. Soc. Amer. B 21(5), 935-943 (2004).

T.Harayama, T. Fukushima, S. Sunada, and K. S. Ikeda, “Asymmetric stationary lasing patterns in 2D symmetric microcavities,” Phys. Rev. Lett. 91(7), 073903 (2003).

T. Harayama, T. Fukushima, P. Davis, P. O. Vaccaro, T. Miyasaka, T. Nishimura, and T. Aida, “Lasing on scar modes in fully chaotic microcavities,” Phys. Rev. E 67, 015207 (2003).

T. Fukushima, T. Harayama, P. Davis, P. O. Vaccaro, T. Nishimura, and T. Aida, “Quasi-stadium laser diodes with an unstable resonator condition,” Opt. Lett. 28(6), 408-410 (2003).

T. Fukushima, H. Miyazaki, T. Ando, T. Tanaka, and T. Sakamoto, “Nonlinear dynamics in directly modulated self-pulsating laser diodes with a highly doped saturable absorption layer,” Jpn. J. Appl. Phys. 41(1), Part1, 117-124 (2002).

T. Furukawa, T. Nakahata, S. Maruno, J. Tanimura, Y. Tokuda, and S. Satoh, “Surface defect formation in epitaxial Si grown on boron-doped substrates by ultrahigh vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 40(10A), L1051-L1053 (2001).

N. Miura, Y. Abe, K. Sugihara, T. Oishi, T. Furukawa, T. Nakahata, K. Shiozawa, S. Maruno, and Y. Tokuda, “Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain NMOSFETs,” IEEE Trans. Electron Devices. ED-48(9), 1969-1974 (2001).

T. Nakahata, K. Sugihara, T. Furukawa, Y. Nishioka, S. Maruno, Y. Abe, Y. Tokuda, and S. Satoh, “Improvement of alignment tolerance against contact hole etching by growing of underlying silicon-selective epitaxial layer,” Microelectronic Engineering 56, 281-287 (2001).

T. Nakahata, K. Yamamoto, J. Tanimura, T. Inagaki, T. Furukawa, S. Maruno, Y. Tokuda, A. Miyamoto, S. Satoh, and H. Kiyama, “Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth,” J. Crystal Growth 226(4), 443-450 (2001).

K. Sugihara, Y. Abe, T. Oishi, N. Miura, and Y. Tokuda, “Short channel characteristics of quasi-single-drain MOSFETs,” IEEE Electron Device Lett. EDL-22(7), 351-353 (2001).

K. Sugihara, N. Miura, T. Furukawa, T. Nakahata, T. Oishi, S. Maruno, Y. Abe, and Y. Tokuda, “A dual-gate complementary metal-oxide-semiconductor technology with novel self-aligned pocket implantation which takes advantage of elevated source/drain configurations,” Jpn. J. App. Phys. 40(4B), 2611-2615 (2001).

K. Shiozawa, T. Oishi, Y. Abe, and Y. Tokuda, “Remarkable effects of introduction of SiON materials into shallow trench isolation fabrication process on metal-oxide-semiconductor field-effect-transistors,” Jpn. J. App. Phys. 40(2A), 462-466 (2001).

T. Fukushima, “Analysis of resonator eigenmodes in symmetric quasi-stadium laser diodes,” J. Lightwave Technol. 18(12), 2208-2216 (2000).

T. Fukushima, K. Hanada, and T. Sakamoto, “Optical signal inverter based on injection locking of laser diode for directly modulated optical pulses,” Jpn. J. Appl. Phys. 39(3A/B), Part 2, L212-L214 (2000).

T. Fukushima, T. Tanaka, and T. Sakamoto, “Stability of optical dynamic memory operation under period-two state of chaotic system,” Jpn. J. Appl. Phys. 39(1), Part 1, 114-119 (2000).

T. Nakahata, K. Sugihara, T. Furukawa, S. Yamakawa, S. Maruno, Y. Tokuda, K. Yamamoto, T. Inagaki, and H. Kiyama, “Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition,” Materials Science and Engineering B68, 171-174 (2000).

S. Maruno, T. Nakahata, T. Furukawa, Y. Tokuda, S. Satoh, K. Yamamoto, T. Inagaki, and H. Kiyama, “Selective epitaxial growth by ultrahigh-vacuum chemical vapor deposition with alternating gas supply of Si2H6 and Cl2,” Jpn. J. Appl. Phys. 39(11), 6139-6142 (2000).

K. Shiozawa, T. Oishi, Y. Abe, and Y. Tokuda, “Expansion of effective channel width for MOSFETs defined by novel T-shaped shallow trench isolation fabricated with SiON spacers and liners,” Electron. Lett. 36(10), 910-912 (2000).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, “Isolation edge effect depending on gate length of MOSFET's with various isolation structures,” IEEE Trans. Electron Devices, ED-47(4), 822-827 (2000).

K. Sugihara, N. Miura, T. Furukawa, T. Nakahata, Y. Nishioka, S. Yamakawa, Y. Abe, S. Maruno, and Y. Tokuda, “Parasitic resistance reduction in deep submicron dual-gate transistors with partially elevated source/drain extension regions fabricated by complementary metal-oxide-semiconductor technologies,” Jpn. J. Appl. Phys. 39(2A), 387-389 (2000).

Y. Abe, T. Oishi, K. Shiozawa, Y. Tokuda, and S. Satoh, “Simulation study on comparison between metal gate and polysilicon gate for sub-quarter-micron MOSFET's,” IEEE Electron. Device Lett. EDL-20(12), 632-634 (1999).

T. Furukawa, T. Nakahata, S. Maruno, Y. Tokuda, and S. Satoh, “Significant effects of As ion implantation on Si-selective epitaxy by ultrahigh vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 38(9A), 5046-5047 (1999).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, Y. Tokuda, and S. Satoh, “Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistor (MOSFET),” Microelectronic Engineering 45, 369-375 (1999).

T. Nakahata, S. Maruno, S. Yamakawa, T. Furukawa, Y. Tokuda, and S. Satoh, “Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition,” Jpn. J. Appl. Phys. 38(7A), 4045-4046 (1999).

S. Yamakawa, K. Sugihara, T. Furukawa, Y. Nishioka, T. Nakahata, Y. Abe, S. Maruno, and Y. Tokuda, “Drivability improvement on deep-submicron MOSFET's by elevation of source/drain regions,” IEEE Electron Device Lett. EDL-20(7), 366-368 (1999).

K. Shiozawa, T. Oishi, K. Sugihara, A. Furukawa, Y. Abe, and Y. Tokuda, “Advantage of shallow trench isolation over local oxidation of silicon on alignment tolerance,” Jpn. J. Appl. Phys. 38(3A), L234-L235 (1999).

T. Oishi, A. Furukawa, K. Shiozawa, Y. Abe, and Y. Tokuda, “Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film,” Electron. Lett. 34(25), 2436-2438 (1998).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, “Anomalous gate length dependence of threshold voltage of trench-isolated metal oxide semiconductor field effect transistors,” Jpn. J. Appl. Phys. 37(7B), L852-L854 (1998).

T. Oishi, K. Shiozawa, K. Sugihara, Y. Abe, and Y. Tokuda, “Protection of field oxide in trench isolation against contact hole etching to improve alignment tolerance,” Jpn. J. Appl. Phys. 37(7B), L833-L835 (1998).

K. Shiozawa, T. Oishi, N. Maeda, T. Murakami, K. Yasumura, Y. Abe, and Y. Tokuda, “Excellent electrical characteristics of ultrafine trench isolation,” J. Electrochem. Soc. 145(5), 1684-1687 (1998).

T. Fukushima and T. Sakamoto, “Chaos in coupled semiconductor lasers with an electronic delayed feedback caused by injection locking,” IEEE J. Quantum Electron. 34(5), 750-758 (1998).

T. Fukushima, S. A. Biellak, Y. Sun, and A. E. Siegman, “Beam propagation behavior in a quasi-stadium laser diode,” Opt. Express 2(2), 21-28 (1998).

T. Fukushima, T. Yokota, and T. Sakamoto, “Fabrication of 7X6 multimode optical fiber grating demultiplexer-star coupler using a single GRIN-rod lens,” J. Lightwave Technol. 15(10), 1938-1946 (1997).

T. Fukushima and T. Sakamoto, “Optical signal inverter using injection locking of coupled semiconductor lasers,” Jpn. J. Appl. Phys. 36(3A), Part 2, L280-L282 (1997).

T. Fukushima and T. Sakamoto, “Multimode optical fiber demultiplexer-star coupler using a single gradient-index-rod lens and a multi-facet grating,” Opt. Rev. 4(1A), 80-84 (1997).

T. Oishi, K. Shiozawa, A. Furukawa, Y. Abe, and Y. Tokuda, “Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench,” Jpn. J. Appl. Phys. 36(5A), L547-L549 (1997).

K. Shiozawa, T. Oishi, N. Maeda, T. Murakami, K. Yasumura, Y. Abe, and Y. Tokuda, “Electrical characteristics of ultra-fine trench isolation fabricated by a new two-step filling process,” Jpn. J. Appl. Phys. 35(12B), L1625-L1627 (1996).

H. Abe, H. Harima, S. Nakashima, M. Tani, K. Sakai, Y. Tokuda, K. Kanamoto, and Y. Abe, “Characterization of crystallinity in low-temperature-grown GaAs layers by Raman scattering and time-resolved photoreflectance measurements,” Jpn. J. Appl. Phys. 35(12A), 5955-5963 (1996).

T. Fukushima and T. Sakamoto, “A 7X6 optical fiber grating demultiplexer-multiposition switch for 0.64-0.88μm band,” J. Lightwave Technol. 14(5), 867-872 (1996).

T. Fukushima, A. Furuya, Y. Kito, H. Sudo, M. Sugano, and T. Tanahashi, “Catastrophic optical damage of AlGaInP visible laser diodes under high-power operation,” Electronics and Communications in Japan 78(7), Part 2, 11-19 (1995).

T. Fukushima, A. Furuya, Y. Kito, H. Sudo, M. Sugano, and T. Tanahashi, “Method of evaluating facet and bulk degradation in semiconductor lasers,” Electronics and Communications in Japan 78(6), Part 2, 65-73 (1995).

T. Fukushima and T. Sakamoto, “Kerr-effect-induced S-R flip-flop operation in an optical fiber loop resonator with double couplers,” Opt. Lett. 20(10), 1119-1121 (1995).

M. Tani, K. Sakai, H. Abe, S. Nakashima, H. Harima, M. Hangyo, Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Spectroscopic characterization of low-temperature grown GaAs epitaxial films,” Jpn. J. Appl. Phys. 33(9A), 4807-4811 (1994).

S. Nara, Y. Tokuda, Y. Abe, M. Yasukawa, N. Tsukada, and H. Totsuji, “Multistable behavior of connected bistable devices,” J. Appl. Phys. 75(8), 3749-3755 (1994).

O. Brandt, K. Kanamoto, Y. Tokuda, Y. Abe, Y. Wada, and N. Tsukada, “Effects of an electric field on exciton recombination in three-step asymmetric coupled quantum wells,” J. Appl. Phys. 75(4), 2105-2109 (1994).

Y. Tokuda, Y. Abe, and N. Tsukada, “External bias voltage and incident light intensity dependence effects of quantum-confined excitonic transitions on bulk background photocurrent spectra,” J. Appl. Phys. 75(3), 1620-1622 (1994).

T. Fukushima, A. Furuya, Y. Kito, M. Sugano, H. Sudo, and T. Tanahashi, “Facet degradation of AlGaInP visible semiconductor lasers with facet passivation,” Jpn. J. Appl. Phys. 33(7B), Part 2, L1007-L1009 (1994).

C. Anayama, A. Furuya, M. Kondo, Y. Sekiguchi, Y. Kito, T. Fukushima, M. Sugano, and T. Tanahashi, “Alternate doping of p-type and n-type impurities for AlGaInP selfaligned stepped substrate (S3) lasers,” Electron. Lett. 30(7), 565-566 (1994).

A. Furuya, T. Fukushima, Y. Kito, C. Anayama, M. Sugano, H. Sudo, M. Kondo, and T. Tanahashi, “Stable high-power operation of self-aligned stepped substrate (S3) AlGaInP visible laser diode with small beam aspect ratio,” Electron. Lett. 30(5), 416-417 (1994).

C. Anayama, H. Sekiguchi, M. Kondo, H. Sudo, T. Fukushima, A. Furuya, and T. Tanahashi, “One-step-metalorganic-vapor-phase-epitaxy-grown AlGaInP visible laser using simultaneous impurity doping,” Appl. Phys. Lett. 63(13), 1736-1738 (1993).

A. Furuya, M. Sugano, Y. Kito, T. Fukushima, H. Sudo, C. Anayama, M. Kondo, and T. Tanahashi, “High-power operation of selfaligned stepped substrate (S3) AlGaInP visible laser diode,” Electron. Lett. 29(15), 1364-1365 (1993).

A. Furuya, Y. Kito, T. Fukushima, M. Sugano, H. Sudo, C. Anayama, M. Kondo, and T. Tanahashi, “Self-aligned bend waveguide (SBW) AlGaInP visible laser diode with small beam astigmatism,” IEEE J. Quantum Electron. 29(6), 1869-1873 (1993).

Y. Abe and Y. Tokuda, “Significant effect of lateral resistivity on optical nonlinear responses of a quantum well p-i-n photodiode,” Appl. Phys. Lett. 63(24), 3259-3261 (1993).

O. Brandt, K. Kanamoto, Y. Tokuda, and N. Tsukada, “Optical properties of a highly-quality (311)-oriened GaAs/Al0.33Ga0.67As single quantum well,” Phys. Rev. B48(23), 17599-17602 (1993).

Y. Tokuda, Y. Abe, N. Tsukada, and S. Nara, “Optically reversible switching between binary states using multistable loops,” Appl. Phys. Lett. 63(19), 2609-2611 (1993).

Y. Abe and Y. Tokuda, “All-optical bistability of a p-i-p-i-n device with GaAs/AlAs coupled-quantum-well absorption layers and AlAs resistive layer,” Opt. Lett. 18(11), 885-887 (1993).

Y. Tokuda and Y. Abe, “Optical bistable responses based on self-electro-optic effect in a nonbiased asymmetric coupled quantum well p-i-n photodiode,” Appl. Phys. Lett. 62(20), 2492-2494 (1993).

Y. Abe, Y. Tokuda, K. Kanamoto, and N. Tsukada, “Optical nonlinear responses of a quantum well photodiode with a non-ohmic contact,” Appl. Phys. Lett. 60(14), 1664-1666 (1992).

K. Kanamoto, Y. Tokuda, and N. Tsukada, “Step promoted surface reconstruction on Ga-deposited (100) GaAs during molecular beam epitaxy with alternating supply of Ga and As,” Jpn. J. Appl. Phys. 30(12A), 3491-3495 (1991).

Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Triple excitonic mixing associated with recoupling of a Stark-localized state in coupled quantum wells confined by superlattices,” Phys. Rev. B43(9), 7170-7173 (1991).

Y. Tokuda, Y. Abe, K. Kanamoto, and N. Tsukada, “Complex multistable response of serially connected optical bistable devices,” Appl. Phys. Lett. 59(9), 1016-1018 (1991).

Y. Abe, Y. Tokuda, K. Kanamoto, and N. Tsukada, “Room-temperature self-electrooptic effects of GaAs/AlAs asymmetric coupled quantum wells,” Jpn. J. Appl. Phys. 30(6A), L963-L965 (1991).

Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Observation of excitonic effects on electroabsorption in coupled quantum wells,” Phys. Rev. B41(14), 10280-10282 (1990).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Novel spectral response of a coupled quantum well photodiode,” Appl. Phys. Lett. 56(22), 2166-2168 (1990).

Y. Tokuda, K. Kanamoto, Y. Abe, and N. Tsukada, “Dual-wavelength multiple quantum well n-i-p-i-n photodetector using an optically bistable abrupt absorption edge,” Appl. Phys. Lett. 56(3), 227-229 (1990).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Self-electro-optic effect based on anticrossing of excitonic transitions in a coupled quantum well structure,” Appl. Phys. Lett. 56(2), 166-167 (1990).

N. Tsukada, K. Fujiwara, Y. Tokuda, K. Kanamoto, and T. Nakayama, “Large population recovery in a strongly driven two-level atomic system by an additional laser field,” Phys. Rev. A39(11), 5797-5800 (1989).

K. Kanamoto, K. Fujiwara, Y. Tokuda, N. Tsukada, M. Ishii, and T. Nakayama, “Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy,” Appl. Surf. Sci. 41/42, 526-529 (1989).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Incident wavelength dependence of photocurrent bistability by external bias voltage control in a quantum well p-i-n diode,” Appl. Phys. Lett. 55(8), 711-712 (1989).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Self-deformed and hysteretic photocurrent spectra of quantum wells with a load resister,” Appl. Phys. Lett. 54(23), 2324-2326 (1989).

Y. Tokuda, K. Kanamoto, and N. Tsukada, “Photoluminescence of a novel hetero n-i-p-i structure incorporating triple quantum wells,” Jpn. J. Appl. Phys. 28(5), L747-L749 (1989).

Y. Tokuda, K. Kanamoto, N. Tsukada, and T. Nakayama, “Distinct observation of interwell coupling effect on optical transitions in double quantum wells in an electric field,” Appl. Phys. Lett. 54(13), 1232-1234 (1989).

Y. Tokuda, K. Kanamoto, N. Tsukada, and T. Nakayama, “Anomalous excitation-intensity dependence of photoluminescence properties of an asymmetric coupled quantum well structure,” J. Appl. Phys. 65(5), 2168-2170 (1989).

K. Kanamoto, K. Fujiwara, Y. Tokuda, N. Tsukada, M. Ishii, and T. Nakayama, “Surface diffusion during MBE growth of GaAs-AlGaAs single quantum wells on vicinal surfaces,” J. Crystal Growth 95(1), 273-276 (1989).

Y. Tokuda, Y. Abe, T. Matsui, K. Kanamoto, N. Tsukada, and T. Nakayama, “Emission spectra of single quantum well lasers with inhomogeneous current injection,” J. Appl. Phys. 64(3), 1022-1026 (1988).

Y. Tokuda, Y. Abe, T. Matsui, N. Tsukada, and T. Nakayama, “Dual-wavelength emission from a twin-stripe single quantum well laser,” Appl. Phys. Lett. 51(21), 1664-1666 (1987).

Y. Tokuda, T. Matsui, K. Fujiwara, N. Tsukada, and T. Nakayama, “Lasing wavelength of an asymmetric double quantum well laser diode,” Appl. Phys. Lett. 51(4), 209-211 (1987).

K. Fujiwara, K. Kanamoto, Y. N. Ohta, Y. Tokuda, and T. Nakayama, “Classification and origins of GaAs oval defects grown by molecular beam epitaxy,” J. Crystal Growth 80(1), 104-112 (1987).

A. Nakamura, K. Fujiwara, Y. Tokuda, T. Nakayama, and M. Hirai, “Dynamics of photoexcited carriers sinking into an enlarged well in a GaAs/AlAs short-period superlattice,” Phys. Rev. B34(12), 9019-9022 (1986).

Y. Tokuda, N. Tsukada, K. Fujiwara, K. Hamanaka, and T. Nakayama, “Widely separated wavelength switching of single quantum well laser diode by injection-current control,” Appl. Phys. Lett. 49(24), 1629-1631 (1986).

K. Fujiwara, A. Nakamura, Y. Tokuda, T. Nakayama, and M. Hirai, “Improved recombination lifetime of photoexcited carrier in GaAs single quantum well heterostructures confined by GaAs/AlAs short-period superlattices,” Appl. Phys. Lett. 49(18), 1193-1195 (1986).

Y. Tokuda, K. Fujiwara, N. Tsukada, K. Kojima, K. Hamanaka, and T. Nakayama, “Carrier-temperature and wavelength-switching in GaAs single-quantum-well laser diode,” Jpn. J. Appl. Phys. 25(11), L931-L933 (1986).

Y. Tokuda, Y. N. Ohta, K. Fujiwara, and T. Nakayama, “Application of AlAs-GaAs superlattice to step-index and graded-index waveguide separate-confinement heterostructure laser diodes,” J. Appl. Phys. 60(8), 2729-2734 (1986).

Y. Tokuda, K. Fujiwara, and T. Nakayama, “Separate confinement heterostructure laser diodes with all-binary AlAs/GaAs short-period-superlattice optical confinement layers,” Inst. Phys. Conf. Ser. 79, 697-702 (1986).

Y. Nishikawa, K. Kanamoto, Y. Tokuda, K. Fujiwara, and T. Nakayama, “On the origin of oval defect with nucleus on epilayers grown by molecular beam epitaxy,” Jpn. J. Appl. Phys. 25(6), 908-909 (1986).

K. Fujiwara, Y. Nishikawa, Y. Tokuda, and T. Nakayama, “Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy,” Appl. Phys. Lett. 48(11), 701-703 (1986).

M. Umesaki. Y. Tokuda, and K. Hamanaka, “Magnetic properties of super sendust films,” IEEE Trans. on Magn. MAG-18(6), 1182-1184(1982).

S. Nakashima, Y. Tokuda, A. Mitsuishi, R. Aoki, and Y. Hamaue, “Raman scattering from 2H-NbS2 and intercalated NbS2,” Solid State Commun. 42(8), 601-604 (1982).